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000000123 001__ 123
000000123 037__ $$aENY-ARTICLE-2008-094
000000123 041__ $$aeng
000000123 088__ $$aI07/1991/P-434I07/1991/P-434
000000123 100__ $$aSwistacz, B$$uWroclaw University of Technology, Poland
000000123 245__ $$aDevelopment of idea of surface recombination in analysis of bipolar-charge transport in metal-dielectric-metal system with thick dielectric.
000000123 260__ $$c1991-04-19
000000123 300__ $$a5p
000000123 500__ $$aBulletin of the Polish Academy of Sciences. Technical Sciences. 1991 vol. 39, No 4, pp. 665-672
000000123 520__ $$aIn this model system there is presented t,he electric conduction with three mobilities of carriers where the surface traps exist. The free electrons and holes as well as the trapped electrons form the space charge in the dielectric. The transient state is examined for the different effects of the injection of carriers. There are determined the functions j(t) and qs(t) of current density and surface charge.
000000123 6531_ $$aelectric conduction
000000123 6531_ $$asurface traps
000000123 8560_ $$fzbigniew.leonowicz@pwr.wroc.pl
000000123 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/123/files/$$zAccess to Fulltext
000000123 909CO $$ooai:zet10.pwr.wroc.pl:123$$pglobal
000000123 980__ $$aARTICLE