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000000130 001__ 130
000000130 037__ $$aENY-ARTICLE-2008-101
000000130 041__ $$aeng
000000130 088__ $$aI07/1986/P-268
000000130 100__ $$aSwistacz, B$$uWroclaw University of Technology, Poland
000000130 245__ $$aThe effect of generation-recombination processes and of injection mechanism on current-voltage dependences in the metal-dielectric-metal system : I. Carrier generation
000000130 260__ $$c1986-04-21
000000130 300__ $$a10p
000000130 500__ $$aBulletin of the Polish Academy of Sciences. Technical Sciences. 1987 vol. 35, No 5/6, pp. 319-328
000000130 520__ $$aA dielectric model in which electrons and holes are the charge carriers was studied. The space charge is formed by free electrons and holes as well as by trapped electrons. Carrier generation with two trapping states, in steady state and at constant voltage was considered in the assumed dielectric model. The considerations refer to the flat capacitor system. The charge injection mechanisms were described by the function of current density and field intensity at the electrodes. The effect of injection mechanisms in conditions of carrier generation on current-voltage relations was investigated.
000000130 6531_ $$aspace charge
000000130 6531_ $$acarrier injection
000000130 6531_ $$acarrier generation
000000130 8560_ $$fzbigniew.leonowicz@pwr.wroc.pl
000000130 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/130/files/$$zAccess to Fulltext
000000130 909CO $$ooai:zet10.pwr.wroc.pl:130$$pglobal
000000130 980__ $$aARTICLE