The effect of generation-recombination processes and of injection mechanism on current-voltage dependences in the metal-dielectric-metal system : II. Carrier recombination
Swistacz, B (Wroclaw University of Technology, Poland)
/ ||I07/1986/P-269 ||ENY-ARTICLE-2008-102|
Abstract: A dielectric model in which electrons and holes are the charge carriers was studied. The space charge is formed by free electrons and holes as well as by trapped electrons. Carrier recombination with two trapping states in steady state and at constant voltage was considered in the assumed dielectric model. The considerations refer to the flat capacitor system. The charge injection mechanisms were described by the function of current density and field intensity at the electrodes. The effect of injection mechanisms in conditions of carrier recombination on current-voltage relations was investigated.
Keyword(s): carrier injection ; carrier recombination ; space charge
Note: Bulletin of the Polish Academy of Sciences. Technical Sciences. 1987 vol. 35, No 5/6, pp. 329-337
Fulltext : http://zet10.ipee.pwr.wroc.pl/record/131/files/
Cited by: try citation search for ENY-ARTICLE-2008-102; I07/1986/P-269
Record created 2008-03-22, last modified 2008-03-22
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