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000000131 001__ 131
000000131 037__ $$aENY-ARTICLE-2008-102
000000131 041__ $$aeng
000000131 088__ $$aI07/1986/P-269
000000131 100__ $$aSwistacz, B$$uWroclaw University of Technology, Poland
000000131 245__ $$aThe effect of generation-recombination processes and of injection mechanism on current-voltage dependences in the metal-dielectric-metal system : II. Carrier recombination
000000131 260__ $$c1986-04-21
000000131 300__ $$a9p
000000131 500__ $$aBulletin of the Polish Academy of Sciences. Technical Sciences. 1987 vol. 35, No 5/6, pp. 329-337
000000131 520__ $$aA dielectric model in which electrons and holes are the charge carriers was studied. The space charge is formed by free electrons and holes as well as by trapped electrons. Carrier recombination with two trapping states in steady state and at constant voltage was considered in the assumed dielectric model. The considerations refer to the flat capacitor system. The charge injection mechanisms were described by the function of current density and field intensity at the electrodes. The effect of injection mechanisms in conditions of carrier recombination on current-voltage relations was investigated.
000000131 6531_ $$acarrier injection
000000131 6531_ $$acarrier recombination
000000131 6531_ $$aspace charge
000000131 8560_ $$fzbigniew.leonowicz@pwr.wroc.pl
000000131 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/131/files/$$zAccess to Fulltext
000000131 909CO $$ooai:zet10.pwr.wroc.pl:131$$pglobal
000000131 980__ $$aARTICLE