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000000132 001__ 132
000000132 037__ $$aENY-ARTICLE-2008-103
000000132 041__ $$aeng
000000132 088__ $$aI07/1985/P-259
000000132 100__ $$aSwistacz, B$$uWroclaw University of Technology, Poland
000000132 245__ $$aKinetic Model of Carrier Recombination in Solid Dielectric
000000132 260__ $$c1985-12-04
000000132 300__ $$a13p
000000132 500__ $$aBulletin of the Polish Academy of Sciences. Technical Sciences. 1987 vol. 35, No 1/2, pp. 101-113
000000132 520__ $$aIn this paper the model of solid dielectric is presented, in which the space-charge is formed by free and trapped electrons, as well as by holes. Charge transport is described by means of the Gauss law, the continuity equation and the system of equations describing the contribution of electron localization and delocalization states in the generation-recombination processes. It is assumed that initial values of carrier concentration are equal to the values of equilibrium concentration Boundary values of free carriers concentration are established basing on mechanisms of carriers injection from metal into the dielectric. The influence of generation-recombination processes and of mechanisms of injection on the time-course of absorption current density are also determined, the latter being evaluated numerically.
000000132 6531_ $$atrapping
000000132 6531_ $$aspace charge
000000132 6531_ $$arecombination
000000132 8560_ $$fzbigniew.leonowicz@pwr.wroc.pl
000000132 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/132/files/$$zAccess to Fulltext
000000132 909CO $$ooai:zet10.pwr.wroc.pl:132$$pglobal
000000132 980__ $$aARTICLE