Transient states of electric conduction in solid dielectric including carrier recombination : 1. Ideal dielectric without traps
Swistacz, B (Wroclaw University of Technology, Poland)
/ ||I07/1985/P-236 ||ENY-ARTICLE-2008-104|
Abstract: A model of a dielectric in which the charge carriers are electrons and holes is considered. The flow of charge is described by the Gauss equation, the continuity equation and an equation for the kinetics of carrier recombination. The boundary conditions are determined on the basis of the investigated mechanisms of injections of charge carriers from the electrode into the dielectric. The effect of injection mechanisms, carrier mobility and recombination coefficient on time curves of absorption intensity is investigated. The problem is solved numerically.
Keyword(s): absorption current ; recombination ; space charge
Note: Bulletin of the Polish Academy of Sciences. Technical Sciences. 1985 vol. 33, No. 11/12, pp. 587-596
Fulltext : http://zet10.ipee.pwr.wroc.pl/record/133/files/
Cited by: try citation search for ENY-ARTICLE-2008-104; I07/1985/P-236
Record created 2008-03-22, last modified 2008-03-22
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