Format: HTML | BibTeX | DC | EndNote | NLM | MARC | MARCXML
000000133 001__ 133
000000133 037__ $$aENY-ARTICLE-2008-104
000000133 041__ $$aeng
000000133 088__ $$aI07/1985/P-236
000000133 100__ $$aSwistacz, B$$uWroclaw University of Technology, Poland
000000133 245__ $$aTransient states of electric conduction in solid dielectric including carrier recombination : 1. Ideal dielectric without traps
000000133 260__ $$c1985-01-28
000000133 300__ $$a10p
000000133 500__ $$aBulletin of the Polish Academy of Sciences. Technical Sciences. 1985 vol. 33, No. 11/12, pp. 587-596
000000133 520__ $$aA model of a dielectric in which the charge carriers are electrons and holes is considered. The flow of charge is described by the Gauss equation, the continuity equation and an equation for the kinetics of carrier recombination. The boundary conditions are determined on the basis of the investigated mechanisms of injections of charge carriers from the electrode into the dielectric. The effect of injection mechanisms, carrier mobility and recombination coefficient on time curves of absorption intensity is investigated. The problem is solved numerically.
000000133 6531_ $$aabsorption current
000000133 6531_ $$arecombination
000000133 6531_ $$aspace charge
000000133 8560_ $$fzbigniew.leonowicz@pwr.wroc.pl
000000133 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/133/files/$$zAccess to Fulltext
000000133 909CO $$ooai:zet10.pwr.wroc.pl:133$$pglobal
000000133 980__ $$aARTICLE