Transient states of electric conduction in solid dielectrics including carrier recombination : 2. Ideal dielectric with deep traps.
Swistacz, B (Wroclaw University of Technology, Poland)
/ ||I07/1985/P-237 ||ENY-ARTICLE-2008-105|
Abstract: Electric conduction in a dielectric with deep traps is analysed. The space charge is made up of free electrons, holes and trapped electrons. The effect of injection mechanisms and carrier mobility on time curves of absorption current density is investigated. The problem is solved numerically.
Keyword(s): space charge ; ładunek przestrzenny ; rekombinacja ; recombination ; pułapkowanie ; trapping ; prąd absorpcji ; absorption current
Note: Bulletin of the Polish Academy of Sciences. Technical Sciences. 1985 vol. 33, No 11/12, pp. 597-603
Fulltext : http://zet10.ipee.pwr.wroc.pl/record/134/files/
Cited by: try citation search for ENY-ARTICLE-2008-105; I07/1985/P-237
Record created 2008-03-22, last modified 2008-03-22
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