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000000167 001__ 167
000000167 037__ $$aENY-ARTICLE-2008-129
000000167 041__ $$aeng
000000167 100__ $$aJaroszewski, M$$uWroclaw University of Technology
000000167 245__ $$aHydrogen Influence on Properties of Thin Film Arresters
000000167 260__ $$c2008-04-06
000000167 300__ $$a3p
000000167 500__ $$aEEEIC 2008
000000167 520__ $$aThe influence of H2 atmosphere on the temperature dependence of resistivity of Zn-Bi-O thin films were characterized in this study. The I-V properties of selected samples were measured by a stabilized dc power source. The resistivity of films vary considerably depending on the concentration of hydrogen.
000000167 6531_ $$aEEEIC
000000167 6531_ $$aZn-Bi-O thin film arrester
000000167 6531_ $$ahydrogen
000000167 6531_ $$aresistivity
000000167 8560_ $$fzbigniew.leonowicz@pwr.wroc.pl
000000167 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/167/files/$$zAccess to Fulltext
000000167 909CO $$ooai:zet10.pwr.wroc.pl:167$$pglobal
000000167 980__ $$aARTICLE