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000000254 037__ $$aENY-ARTICLE-2008-200
000000254 041__ $$aeng
000000254 088__ $$aI09/2008/I-044
000000254 100__ $$aWrobel, J M$$uDepartment of Physics, University of Missouri-KC, Kansas City, Missouri 64110, USA
000000254 245__ $$aThermally stimulated current in high resistivity Cd0.85Mn0.15Te doped with Indium.
000000254 260__ $$c2007-10-15
000000254 300__ $$a4p
000000254 500__ $$aJournal of Applied Physics. 2008 vol. 103, nr 6, pp. 063720-1, - 063720-4.
000000254 520__ $$aCharge carrier traps in Cd(0,85)Mn(0,15)Te doped with indium were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 100 to 300 K. Four peaks in the current spectrum were identified. From the initial rise method and the best fit of the spectrum to the theoretical model, the activation energies and the relaxation parameters for the corresponding traps were determined.
000000254 700__ $$aGubanski, A$$uInstitute of Electrical Engineering Fundamentals, Wroclaw, Poland
000000254 700__ $$aPlaczek-Popko, E$$uInstitute of Physics, Wroclaw University of Technology, Poland
000000254 700__ $$aRezmer, J$$uInstitute of Electrical Engineering Fundamentals, Wroclaw, Poland
000000254 700__ $$aBecla, P$$uDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
000000254 8560_ $$fleon99@pwr.wroc.pl
000000254 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/254/files/$$zAccess to Fulltext
000000254 909CO $$ooai:zet10.pwr.wroc.pl:254$$pglobal
000000254 980__ $$aARTICLE