Thermally stimulated current in high resistivity Cd0.85Mn0.15Te doped with Indium.
Wrobel, J M (Department of Physics, University of Missouri-KC, Kansas City, Missouri 64110, USA) ; Gubanski, A (Institute of Electrical Engineering Fundamentals, Wroclaw, Poland) ; Placzek-Popko, E (Institute of Physics, Wroclaw University of Technology, Poland) ; Rezmer, J (Institute of Electrical Engineering Fundamentals, Wroclaw, Poland) ; Becla, P (Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA)
/ ||I09/2008/I-044 ||ENY-ARTICLE-2008-200|
Abstract: Charge carrier traps in Cd(0,85)Mn(0,15)Te doped with indium were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 100 to 300 K. Four peaks in the current spectrum were identified. From the initial rise method and the best fit of the spectrum to the theoretical model, the activation energies and the relaxation parameters for the corresponding traps were determined.
Note: Journal of Applied Physics. 2008 vol. 103, nr 6, pp. 063720-1, - 063720-4.
Fulltext : http://zet10.ipee.pwr.wroc.pl/record/254/files/
Cited by: try citation search for ENY-ARTICLE-2008-200; I09/2008/I-044
Record created 2008-11-04, last modified 2008-11-04
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