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Published Article / AZ I07/03/P-004 doi:10.1016/j.vacuum.2003.12.141 ENY-ARTICLE-2008-042

Varistor performance of nanocrystalline Zn-Bi-O thin films prepared by reactive RF magnetron sputtering at room temperature

Mista, W (Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw, Poland) ; Ziaja, J (Institute of Electrical Engineering Fundamentals, Wroclaw University of Technology, Poland) ; Gubanski, A (Institute of Electrical Engineering Fundamentals, Wroclaw University of Technology, Poland)


Abstract: The Zn–Bi–O films were deposited by reactive radio frequency magnetron sputtering in oxygen atmosphere from ZnBi alloy target (wt. ratio Zn:Bi=9:1) on glass substrate at room temperature. The XRD patterns show that the films deposited on tin-doped indium oxide/glass substrates were nanocrystalline. The microstructure of Bi-doped ZnO films was studied by scanning electron microscopy in combination with energy dispersive X-ray spectroscopy. All the obtained layers had varistor-type non-linear current–voltage (I–V) characteristics with low breakdown voltage varying from few tenths of a volt to few volts.

Keyword(s): ZnO–Bi2O3 ; Thin films ; RF magnetron sputtering ; XRD ; SEM ; Electrical properties
Note: Vacuum 2004 Vol. 74 No. 2 pp. 293-296

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Cited by: try citation search for ENY-ARTICLE-2008-042; AZ I07/03/P-004; doi:10.1016/j.vacuum.2003.12.141

Record created 2008-03-11, last modified 2008-03-12

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