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000000050 037__ $$aENY-ARTICLE-2008-042
000000050 041__ $$aeng
000000050 088__ $$aAZ I07/03/P-004
000000050 088__ $$adoi:10.1016/j.vacuum.2003.12.141
000000050 100__ $$aMista, W$$uInstitute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw, Poland
000000050 245__ $$aVaristor performance of nanocrystalline Zn-Bi-O thin films prepared by reactive RF magnetron sputtering at room temperature
000000050 260__ $$c2003-12-22
000000050 300__ $$a4p
000000050 500__ $$aVacuum 2004 Vol. 74 No. 2 pp. 293-296
000000050 520__ $$aThe Zn–Bi–O films were deposited by reactive radio frequency magnetron sputtering in oxygen atmosphere from ZnBi alloy target (wt. ratio Zn:Bi=9:1) on glass substrate at room temperature. The XRD patterns show that the films deposited on tin-doped indium oxide/glass substrates were nanocrystalline. The microstructure of Bi-doped ZnO films was studied by scanning electron microscopy in combination with energy dispersive X-ray spectroscopy. All the obtained layers had varistor-type non-linear current–voltage (I–V) characteristics with low breakdown voltage varying from few tenths of a volt to few volts.
000000050 6531_ $$aZnO–Bi2O3
000000050 6531_ $$aThin films
000000050 6531_ $$aRF magnetron sputtering
000000050 6531_ $$aXRD
000000050 6531_ $$aSEM
000000050 6531_ $$aElectrical properties
000000050 700__ $$aZiaja, J$$uInstitute of Electrical Engineering Fundamentals, Wroclaw University of Technology, Poland
000000050 700__ $$aGubanski, A$$uInstitute of Electrical Engineering Fundamentals, Wroclaw University of Technology, Poland
000000050 8560_ $$fzbigniew.leonowicz@pwr.wroc.pl
000000050 8564_ $$uhttp://zet10.ipee.pwr.wroc.pl/record/50/files/$$zAccess to Fulltext
000000050 909CO $$ooai:zet10.pwr.wroc.pl:50$$pglobal
000000050 980__ $$aARTICLE