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Published Article / I07/1996/I-250 ENY-ARTICLE-2008-078

Investigations of the field emission current from bismuth ceramic cathodes

Mazurek, B (Wroclaw University of Technology, Poland) ; Ziaja, J (Wroclaw University of Technology, Poland) ; Noras, M (Wroclaw University of Technology, Poland)


Abstract: In this work the investigations of the emission current from BizSrzBazCu30axn d Bi2Sr2BaCu2Ox ceramic cathodes are presented. Experiments were carried out in the vacuum chamber at pressure within the range of Tr 10-8(10-6 Pa), with DC high-voltage power supply and high-class digital electrometer. Current-voltage and Fowler-Nordheim characteristics for the cathodes superconducting in liquid nitrogen temperature were obtained for various distances between electrodes. Current vs. temperature characteristics were also measured. For some measurements the transparent anode technique was employed in order to provide informations about emission origin point. Emission current was registered for the electron emission originating from a single emission center.Superconducting state did not influence current-voltage dependences. It was observed for superconducting cathodes that emission current abruptly changes in the vicinity of the superconducting transition temperature T,. Emission current was stable and practically constant for the temperatures below T, and became unstable and noisy for the temperatures above T,. Emission current rate depends on the temperature range of the superconducting transition AT,.. Superconducting parameters of the cathodes: critical temperature T,, temperature range of the superconducting transition AT, and critical current density j, were also measured. It was found that sorbtion phenomena on the surface of cathodes during cooling and heating of the electrodes influence emission current values and play major role in the emission phenomena.

Keyword(s): emission current ; superconductivity
Note: XVIIth International Symposium on Discharges and Electrical Insulation in Vacuum. ISDEIV. Proceedings, Berkley, California, July 21-26, 1996. Vol. 2. Piscataway, NJ : IEEE, 1996. pp. 818-822

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