Elektrotechnik TU Wroclaw

Elektrotechnik TU Wroclaw 22 Datensätze gefunden  vorherige3 - 12nächste  gehen zum Datensatz: Die Suche hat 0.00 Sekunden gedauert. 
3.
Transient states of electric conduction in solid dielectric including carrier recombination : 1. Ideal dielectric without traps / Swistacz, B [I07/1985/P-236] [ENY-ARTICLE-2008-104]
A model of a dielectric in which the charge carriers are electrons and holes is considered. [...]
http://zet10.ipee.pwr.wroc.pl/record/133/files/
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4.
Bipolar space-charge problem for semiconductors and insulators / Swistacz, B [ENY-ARTICLE-2008-035]
In this work we make use of classical analysis for electrical conduction with one or two boundary conditions. [...]
http://zet10.ipee.pwr.wroc.pl/record/42/files/
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5.
Transient states of electric conduction in solid dielectrics including carrier recombination : 2. Ideal dielectric with deep traps. / Swistacz, B [I07/1985/P-237] [ENY-ARTICLE-2008-105]
Electric conduction in a dielectric with deep traps is analysed. [...]
http://zet10.ipee.pwr.wroc.pl/record/134/files/
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6.
Analysis of steady state electric conduction in solid with given functions of carrier mobilities under conditions of collision recombination / Swistacz, B [I07/1991/P-428] [ENY-ARTICLE-2008-095]
This work presents an analysis of the transport of "hot carriers" of charge in the planar capacitor system. [...]
http://zet10.ipee.pwr.wroc.pl/record/124/files/
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7.
New solution to the problem of bipolar injection in insulator and semiconductor devices. Solids with an arbitrary distribution of defects / Swistacz, B [ENY-ARTICLE-2008-018]
A problem of the bipolar space charge transport between the anode and the cathode is presented. [...]
http://zet10.ipee.pwr.wroc.pl/record/21/files/
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8.
Kinetic Model of Carrier Recombination in Solid Dielectric / Swistacz, B [I07/1985/P-259] [ENY-ARTICLE-2008-103]
In this paper the model of solid dielectric is presented, in which the space-charge is formed by free and trapped electrons, as well as by holes. [...]
http://zet10.ipee.pwr.wroc.pl/record/132/files/
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9.
The effect of generation-recombination processes and of injection mechanism on current-voltage dependences in the metal-dielectric-metal system : II. Carrier recombination / Swistacz, B [I07/1986/P-269] [ENY-ARTICLE-2008-102]
A dielectric model in which electrons and holes are the charge carriers was studied. [...]
http://zet10.ipee.pwr.wroc.pl/record/131/files/
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10.
The effect of generation-recombination processes and of injection mechanism on current-voltage dependences in the metal-dielectric-metal system : I. Carrier generation / Swistacz, B [I07/1986/P-268] [ENY-ARTICLE-2008-101]
A dielectric model in which electrons and holes are the charge carriers was studied. [...]
http://zet10.ipee.pwr.wroc.pl/record/130/files/
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11.
Electron-ion conductance in the metal-dielectric-metal system with two given boundary conditions. P. 2. Generation-recombination with two mobilities. / Swistacz, B [I07/1989/P-381] [ENY-ARTICLE-2008-098]
Transport of free positive charge carriers and of trapped negative charge carriers in a model dielectric is considered. [...]
http://zet10.ipee.pwr.wroc.pl/record/127/files/
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12.
Analysis of double injection in solids: Further results / Swistacz, B [I07/1994/P-502] [ENY-ARTICLE-2008-093]
In this work we further continue to analyse electric conduction with two given boundary conditions. [...]
http://zet10.ipee.pwr.wroc.pl/record/122/files/
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