1.
| Kinetic Model of Carrier Recombination in Solid Dielectric
/ Swistacz, B
[I07/1985/P-259]
[ENY-ARTICLE-2008-103]
In this paper the model of solid dielectric is presented, in which the space-charge is formed by free and trapped electrons, as well as by holes. [...]
http://zet10.ipee.pwr.wroc.pl/record/132/files/
Detailed record - Similar records |
2.
| Transient states of electric conduction in solid dielectric including carrier recombination : 1. Ideal dielectric without traps
/ Swistacz, B
[I07/1985/P-236]
[ENY-ARTICLE-2008-104]
A model of a dielectric in which the charge carriers are electrons and holes is considered. [...]
http://zet10.ipee.pwr.wroc.pl/record/133/files/
Detailed record - Similar records |
3.
| The effect of generation-recombination processes and of injection mechanism on current-voltage dependences in the metal-dielectric-metal system : II. Carrier recombination
/ Swistacz, B
[I07/1986/P-269]
[ENY-ARTICLE-2008-102]
A dielectric model in which electrons and holes are the charge carriers was studied. [...]
http://zet10.ipee.pwr.wroc.pl/record/131/files/
Detailed record - Similar records |
4.
| The effect of generation-recombination processes and of injection mechanism on current-voltage dependences in the metal-dielectric-metal system : I. Carrier generation
/ Swistacz, B
[I07/1986/P-268]
[ENY-ARTICLE-2008-101]
A dielectric model in which electrons and holes are the charge carriers was studied. [...]
http://zet10.ipee.pwr.wroc.pl/record/130/files/
Detailed record - Similar records |
5.
| Transient states of electric conduction in solid dielectrics including carrier recombination : 2. Ideal dielectric with deep traps.
/ Swistacz, B
[I07/1985/P-237]
[ENY-ARTICLE-2008-105]
Electric conduction in a dielectric with deep traps is analysed. [...]
http://zet10.ipee.pwr.wroc.pl/record/134/files/
Detailed record - Similar records |
6.
| Analysis of steady state electric conduction in solid with given functions of carrier mobilities under conditions of collision recombination
/ Swistacz, B
[I07/1991/P-428]
[ENY-ARTICLE-2008-095]
This work presents an analysis of the transport of "hot carriers" of charge in the planar capacitor system. [...]
http://zet10.ipee.pwr.wroc.pl/record/124/files/
Detailed record - Similar records |
7.
| Electron-ion conductance in the metal-dielectric-metal system with two given boundary conditions. P. 2. Generation-recombination with two mobilities.
/ Swistacz, B
[I07/1989/P-381]
[ENY-ARTICLE-2008-098]
Transport of free positive charge carriers and of trapped negative charge carriers in a model dielectric is considered. [...]
http://zet10.ipee.pwr.wroc.pl/record/127/files/
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8.
| Development of idea of surface recombination in analysis of bipolar-charge transport in metal-dielectric-metal system with thick dielectric.
/ Swistacz, B
[I07/1991/P-434I07/1991/P-434]
[ENY-ARTICLE-2008-094]
In this model system there is presented t,he electric conduction with three mobilities of carriers where the surface traps exist. [...]
http://zet10.ipee.pwr.wroc.pl/record/123/files/
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9.
| Relations n(p) between positive and negative charge carrier concentrations in conditions of bimolecular recombinations
/ Swistacz, B
[I07/1987/P-296]
[ENY-ARTICLE-2008-099]
A model of dielectric with positive and negative charge carrier is presented. [...]
http://zet10.ipee.pwr.wroc.pl/record/128/files/
Detailed record - Similar records |
10.
| Carrier generation and the switching phenomenon: further theoretical description
/ Swistacz, B
[ENY-ARTICLE-2008-034]
In this paper the problem of the current flow between the two electrodes is further continued. [...]
http://zet10.ipee.pwr.wroc.pl/record/41/files/
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